| PART |
Description |
Maker |
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| ATC100A0R7BT ATC100A220JT ATC100A0R2BT ATC100A150J |
380W GaN WIDEBAND PULSED
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
Philips Semiconductors
|
| KA22296 |
Playback / Recoder Pre Amplifie for Double Deck
|
SEC
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| QPB1500 QPB1500S2 QPB1500PCB4B01 |
Ku-Band 25 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
